4GB Lot 2x 2GB PC2-5300F ECC Buffered DDR2 667MHz Server WS FB-DIMM HP Dell IBM For Sale
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4GB Lot 2x 2GB PC2-5300F ECC Buffered DDR2 667MHz Server WS FB-DIMM HP Dell IBM:
$6.16
Total 4GB. Lot of 2 pieces of2GB Micron, Kingston, Samsungor Hynix Workstation Server PC2-5300F Memory. (Not PC2-5300U desktop memory). Pulled from computer. 100% tested working right before packing and shipping. 10 days warranty.
For outside Canada, 0% tax. For Canada, 5% or 13% HST. Please select and add HST during checkout. Or you may email to us for invoice with HST to pay. For cash pickup, handling fee is $0.49 but we can discount 13% HST under certain conditions. Please check your memory type to be correct with your motherboard before buying. No return and no refund is allowed if you order it wrong.
Specification
Memory Module PC2-5300F DDR2 SDRAM 667MHz full buffered ECC 800MT/s 240-FBDIMM FBDIMM devices adhere to the currently proposed industry specifications for FBDIMMs. The following specifications contain detailed information on FBDIMM design, interfaces, and theory of operation and are listed here for the system designers’ convenience. FBDIMM Design Specification – pending JEDEC approval. FBDIMM: Architecture and Protocol – JESD206. FBDIMM: Advanced Memory Buffer (AMB) – JESD82-20. Design for Test, Design for Validation (DFx) Specification. Serial Presence-Detect (SPD) for Fully Buffered DIMM – JEDEC Standard No. 21-C. This DDR2 SDRAM module is a high-bandwidth, large-capacity channel solution that has a narrow host interface. FBDIMM devices use DDR2 SDRAM devices isolated from the channel behind an AMB on the FBDIMM. Memory device capacity remains high, and total memory capacity scales with DDR2 SDRAM bit density. As shown in the System Block Diagram, the FBDIMM channel provides a communication path from a host controller to an array of DDR2 SDRAM devices, with the DDR2 SDRAM devices buffered behind an AMB device. The physical isolation of the DDR2 SDRAM devices from the channel enhances the communication path and significantly increases the reliability and availability of the memory subsystem.
